PCF85102C-2P/03,11【PDF 1/20 页】IC EEPROM 2KBIT 100KHZ 8DIP

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PCF85102C-2

256 × 8-bit CMOS EEPROM with I 2 C-bus interface

Rev. 04 — 22 October 2004

Product data

1. Description

The PCF85102C-2 is a ?oating gate Electrically Erasable Programmable Read Only

Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage. By using an

internal redundant storage code, it is fault tolerant to single bit errors. This feature

dramatically increases the reliability compared to conventional EEPROMs. Power

consumption is low due to the full CMOS technology used. The programming voltage

is generated on-chip, using a voltage multiplier.

Data bytes are received and transmitted via the serial I 2 C-bus. Up to eight

PCF85102C-2 devices may be connected to the I 2 C-bus. Chip select is accomplished

by three address inputs (A0, A1 and A2).

2. Features

s Low power CMOS:

x 2.0 mA maximum operating current

x maximum standby current 10 μ A (at 6.0 V), typical 4 μ A

s Non-volatile storage of 2 kbits organized as 256 × 8-bit

s Single supply with full operation down to 2.5 V

s On-chip voltage multiplier

s Serial input/output I 2 C-bus

s Write operations:

x byte write mode

x 8-byte page write mode (minimizes total write time per byte)

s Read operations:

x sequential read

x random read

s Internal timer for writing (no external components)

s Internal power-on reset

s 0 kHz to 100 kHz clock frequency

s High reliability by using a redundant storage code

s Endurance: 1,000,000 Erase/Write (E/W) cycles at T amb = 22 ° C

s 10 years non-volatile data retention time

s Pin and address compatible to: PCF8570, PCF8571, PCF8572, PCA8581,

PCF8582

s Pin compatible (with a different address) to PCF85103

s ESD protection exceeds 2000 V HBM per JESD22-A114, 150 V MM per

JESD22-A115, and 1000 V CDM per JESD22-C101

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